发明名称 プラズマ処理装置
摘要 <p>In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield.</p>
申请公布号 JP5711953(B2) 申请公布日期 2015.05.07
申请号 JP20100276521 申请日期 2010.12.13
申请人 株式会社日立ハイテクノロジーズ 发明人 具志堅 正春;齋藤 惠;西尾 良司
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
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