| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves current driving capability and performance by applying stress to a channel formation region in a direction for improving current driving capability of a transistor. <P>SOLUTION: A semiconductor device comprises an NTr in which an active region 1c of a semiconductor substrate 1a is partitioned by a device isolation insulation film 2, and having a channel formation region, a gate insulation film, a gate electrode 8a, a source/drain region and a coating stress film. Surfaces of the device isolation insulation films 2a located on both sides of the source/drain region are formed lower than a surface of the source/drain region. The covering stress film that applies tensile stress to the channel formation region is formed by covering the gate electrode 8a, the active region 1c and the device isolation insulation films 2a whose surfaces are lower than the surface of the source/drain region is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
