发明名称 Chemically Passivated Zinc Oxide Photoelectrode for Photoelectrochemical Water Splitting
摘要 A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.
申请公布号 US2015122639(A1) 申请公布日期 2015.05.07
申请号 US201414529208 申请日期 2014.10.31
申请人 Brookhaven Science Associates, LLC 发明人 Liu Mingzhao;Nam Chang-Yong;Black Charles T.
分类号 C25B1/00;C25B1/04;C25B11/04 主分类号 C25B1/00
代理机构 代理人
主权项 1. A photoelectrode comprising a conductive substrate, a layer of conductive oxide over said conductive substrate, and a layer of chemically inert semiconductor material coating said conductive oxide layer, wherein said layer of chemically inert semiconductor material coating has a thickness of less than 5 nm.
地址 Upton NY US