发明名称 |
Chemically Passivated Zinc Oxide Photoelectrode for Photoelectrochemical Water Splitting |
摘要 |
A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed. |
申请公布号 |
US2015122639(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201414529208 |
申请日期 |
2014.10.31 |
申请人 |
Brookhaven Science Associates, LLC |
发明人 |
Liu Mingzhao;Nam Chang-Yong;Black Charles T. |
分类号 |
C25B1/00;C25B1/04;C25B11/04 |
主分类号 |
C25B1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A photoelectrode comprising a conductive substrate, a layer of conductive oxide over said conductive substrate, and a layer of chemically inert semiconductor material coating said conductive oxide layer, wherein said layer of chemically inert semiconductor material coating has a thickness of less than 5 nm. |
地址 |
Upton NY US |