JUNCTION BARRIER SCHOTTKY DIODE AND JUNCTION BARRIER SCHOTTKY DIODE MANUFACTURED THEREBY

摘要

The present invention relates to a junction barrier Schottky diode and a junction barrier Schottky diode manufactured thereby, and, more particularly, to a junction barrier Schottky diode using a Schottky contact and a junction barrier Schottky diode manufactured thereby. To this end, a method for manufacturing a junction barrier Schottky diode of the present invention comprises the steps of: forming a n- epitaxial layer on an upper surface of a n+ substrate; forming a p+ junction barrier grid and a p+ floating field guard ring by injecting a p- type dopant on an upper surface of the n- epitaxial layer; forming a cathode electrode on a lower surface of the n+ substrate; forming a passivation film which covers some of an outermost junction barrier grid of the p+ junction barrier grid and the p+ floating field guard ring; forming a trench in an interior of the p+ junction barrier grid by etching the p+ junction barrier grid through the interior thereof; and forming an anode electrode on the upper surface of the n- epitaxial layer.