VERTICAL TYPE NON-VOLATILE MEMORY DEVICE

摘要

Provided are a vertical non-volatile memory device which has high density and enhanced reliability by reducing the height of a mold and minimizing misalignment at the same time and a method for manufacturing the same. The vertical non-volatile memory device comprises: a substrate wherein a cell area is defined on the basis of block units; multiple vertical channel structures which are formed by vertically growing on the surface within the cell area and are spaced apart from each other; and multiple gate electrodes and interlayer dielectrics which are alternately stacked along the side wall of the vertical channel structures on the substrate within the cell area and have at least one from metal film and metal silicide layer. The cell area has a connection area wherein the gate electrodes are extended horizontally to the substrate and connected with a word line through a vertical contact and a dummy area wherein the vertical channel structures are arranged on the outermost cell area. A polysilicon film is formed on the side wall of at least one from the vertical channel structures in the dummy area in response to at least one among the gate electrodes.