| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce a contact resistance and a contact thermal resistance at a junction part of a pressure contact type semiconductor module.SOLUTION: A source/emitter electrode terminal 4 is provided in a source/emitter electrode layer 2a of a semiconductor element 2 via an electrode post 10. A drain/collector electrode terminal 5 is provided in a drain/collector electrode layer 2c of the semiconductor element 2 via an electrode post 14. Onto a surface contacted with the source/emitter electrode layer 2a and a surface contacted with the source/emitter electrode terminal 4, of the electrode post 10, and a surface contacted with the drain/collector electrode layer 2c and a surface contacted with the drain/collector electrode terminal 5, of the electrode post 14, metal particle paste containing metal particles is applied. The source/emitter electrode terminal 4 and the drain/collector electrode terminal 5 are pressed in a direction of the semiconductor element 2 to assemble a semiconductor module 1. The metal particle paste layer is heated to deposit the metal particles while a pressure-welding force is exerted on a metal particle paste layer (a paste layer), and thereby, a metal particle layer 12(a jointing layer) is formed.</p> |
