| 摘要 |
<p>A film deposition apparatus includes processing areas spaced part from each other in a circumferential direction and at least one separation gas nozzle arranged between the process areas, and separates the process areas from each other by supplying a separation gas from the separation gas nozzle. Moreover, a first ceiling surface is provided on the downstream side in a rotational direction of the turntable relative to the separation gas nozzle to form a narrow space between an upper surface of the turntable and a lower surface of the first ceiling surface. Furthermore, a second ceiling surface higher than the first ceiling surface is provided on the upstream side in the rotational direction of the turntable.</p> |
