| 摘要 |
<p>The present invention is A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOI layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays. As a result, a method for measuring the film thickness of an SOI layer of an SOI wafer, the method that can measure the film thickness of an SOI layer of an SOI wafer accurately with high spatial resolution in a microscopic area in the SOI layer even when the film thickness of the SOI layer of the SOI wafer is small, is provided.</p> |
