MULTI-LINE WIDTH PATTERN CREATED USING PHOTOLITHOGRAPHY

摘要

Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other.

主权项

1. A method comprising:
forming a polymer layer over a substrate; patterning the polymer layer to form a first feature and a second feature, the first feature and the second feature being separated at a first distance; applying a rinse material to the polymer layer including the first feature and the second feature; removing the rinse material from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other; and forming a third feature based on the first feature and the second feature being in contact with each other.