发明名称 |
SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING THE SAME, MEMORY CARDS INCLUDING THE SAME AND ELECTRONIC SYSTEMS INCLUDING THE SAME |
摘要 |
Semiconductor devices are provided. The semiconductor device includes a through electrode penetrating a substrate such that an end portion of the through electrode protrudes from a surface of the substrate, a passivation layer covering the surface of the substrate and defining a plug hole that exposes the end portion of the through electrode, and a barrier plug filling the plug hole. Related methods, related memory cards and related electronic systems are also provided. |
申请公布号 |
US2015123278(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201414247049 |
申请日期 |
2014.04.07 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK Sung Su;MOON Jong Kyu;PARK Wan Choon;KIM Bae Yong |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a through electrode penetrating a substrate such that an end portion of the through electrode protrudes from a surface of the substrate; a passivation layer covering the surface of the substrate and defining a plug hole that exposes the end portion of the through electrode, a top surface of the end portion of the through electrode corresponding to a bottom surface of the plug hole; and a barrier plug filling the plug hole. |
地址 |
Icheon KR |