发明名称 SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING THE SAME, MEMORY CARDS INCLUDING THE SAME AND ELECTRONIC SYSTEMS INCLUDING THE SAME
摘要 Semiconductor devices are provided. The semiconductor device includes a through electrode penetrating a substrate such that an end portion of the through electrode protrudes from a surface of the substrate, a passivation layer covering the surface of the substrate and defining a plug hole that exposes the end portion of the through electrode, and a barrier plug filling the plug hole. Related methods, related memory cards and related electronic systems are also provided.
申请公布号 US2015123278(A1) 申请公布日期 2015.05.07
申请号 US201414247049 申请日期 2014.04.07
申请人 SK HYNIX INC. 发明人 PARK Sung Su;MOON Jong Kyu;PARK Wan Choon;KIM Bae Yong
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
主权项 1. A semiconductor device comprising: a through electrode penetrating a substrate such that an end portion of the through electrode protrudes from a surface of the substrate; a passivation layer covering the surface of the substrate and defining a plug hole that exposes the end portion of the through electrode, a top surface of the end portion of the through electrode corresponding to a bottom surface of the plug hole; and a barrier plug filling the plug hole.
地址 Icheon KR