SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The inventive concepts provide semiconductor devices and methods of manufacturing the same. One semiconductor device includes a substrate, a device isolation layer disposed on the substrate, a fin-type active pattern defined by the device isolation layer and having a top surface higher than a top surface of the device isolation layer, a first conductive line disposed on an edge portion of the fin-type active pattern and on the device isolation layer adjacent to the edge portion of the fin-type active pattern, and an insulating thin layer disposed between the fin-type active pattern and the first conductive line. The first conductive line forms a gate electrode of an anti-fuse that may be applied with a write voltage.

主权项

1. A semiconductor device comprising:
a substrate; a device isolation layer on the substrate; a fin-type active pattern defined by the device isolation layer, the fin-type active pattern extending in a first direction, and the fin-type active pattern having a top surface higher than a top surface of the device isolation layer; a first conductive line on an edge portion of the fin-type active pattern and on the device isolation layer adjacent to the edge portion of the fin-type active pattern; and an insulating thin layer between the fin-type active pattern and the first conductive line, wherein the first conductive line pattern forms a gate electrode of an anti-fuse to which a write voltage is applied.