| 发明名称 |
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate. |
| 申请公布号 |
US2015123164(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201414273341 |
申请日期 |
2014.05.08 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK Jae Hoon;SUNG Jae Kyu;SONG In Hyuk;OH Ji Yeon;SEO Dong Soo |
| 分类号 |
H01L29/739;H01L29/78;H01L29/74;H01L29/66 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a first conductivity type first semiconductor region; a second conductivity type second semiconductor region disposed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region disposed in an upper inner side of the second semiconductor region; a trench gate penetrating through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region disposed below the second semiconductor region while being spaced apart from the trench gate. |
| 地址 |
Suwon-Si KR |
