OXIDE SEMICONDUCTOR COMPOSITION AND MANUFACTURING METHOD THEREOF, OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

An oxide semiconductor composition comprises graphene, a metal oxide precursor, and a solvent. Based on a total weight of the oxide semiconductor composition, a concentration of the graphene is between 0.01 and 10 wt %, a concentration of the metal oxide is between 0.01 and 30 wt %, and a concentration of the solvent is between 60 and 99.98 wt %.

主权项

1. A manufacturing method of preparing an oxide semiconductor composition, comprising following steps:
mixing a metal oxide precursor, graphene and a solvent to form the oxide semiconductor composition, wherein the metal oxide precursor and the solvent form a metal oxide solution, the graphene is distributed in the metal oxide solution, based on a total weight of the oxide semiconductor composition, a concentration of the graphene is 0.01 to 10 wt %, a concentration of the metal oxide precursor is 0.01 to 30 wt %, and a concentration of the solvent is 60 to 99.98 wt %.