| 发明名称 |
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure. The polycrystalline material includes a MgAgAs type crystal grain having regions of different Ti concentrations.;(AaTib)cDdXe Composition formula (1);wherein 0.2≦a≦0.7, 0.3≦b≦0.8, a+b=1, 0.93≦c≦1.08, and 0.93≦e≦1.08 hold when d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb. |
| 申请公布号 |
US2015122302(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201514597609 |
申请日期 |
2015.01.15 |
| 申请人 |
Kabushiki Kaisha Toshiba ;Toshiba Materials Co., Ltd. |
发明人 |
SAWA Takao |
| 分类号 |
H01L35/20;C22C30/04;B22F9/08;B22F3/12;B22F3/24;B22F9/04;H01L35/18;C22C1/04 |
主分类号 |
H01L35/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A thermoelectric conversion material made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure, the polycrystalline material comprising: a MgAgAs type crystal grain having regions of different Ti concentrations,
(AaTib)cDdXe Composition formula (1) wherein 0.2≦a≦0.7, 0.3≦b≦0.8, a+b=1, 0.93≦c≦1.08, and 0.93≦e≦1.08 hold when d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb. |
| 地址 |
Tokyo JP |
