发明名称 |
METHODS AND APPARATUS FOR MEASURING SEMICONDUCTOR DEVICE OVERLAY USING X-RAY METROLOGY |
摘要 |
<p>Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.</p> |
申请公布号 |
WO2015066040(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014US62674 |
申请日期 |
2014.10.28 |
申请人 |
KLA-TENCOR CORPORATION |
发明人 |
VELDMAN, ANDREI;BAKEMAN, MICHAEL S.;SHCHEGROV, ANDREI V.;MIEHER, WALTER D. |
分类号 |
H01L21/66;H01L21/268 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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地址 |
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