发明名称 NONVOLATILE MEMORY DEVICE, SYSTEM AND PROGRAMMING METHOD WITH DYNAMIC VERIFICATION MODE SELECTION
摘要 Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.
申请公布号 US2015124526(A1) 申请公布日期 2015.05.07
申请号 US201514595788 申请日期 2015.01.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM Moo Sung
分类号 G11C16/10;G11C16/34 主分类号 G11C16/10
代理机构 代理人
主权项 1. A method of operating a nonvolatile memory device including a plurality of multi-level memory cells, the method comprising: applying a first programming voltage to a selected wordline; after the first programming voltage is applied to the selected wordline, performing a first two-step operation on memory cells connected to the selected wordline, the first two-step operation including performing a first pre-verification operation on the memory cells using a first threshold voltage and performing a first verification operation on the memory cells using a second threshold voltage greater than the first threshold voltage; after the first programming voltage is applied to the selected wordline, performing a second two-step operation on the memory cells, the second two-step operation including performing a second pre-verification operation on the memory cells using a third threshold voltage greater than the second threshold voltage and performing a second verification operation on the memory cells using a fourth threshold voltage greater than the third threshold voltage; applying a second programming voltage to the selected wordline, the second programming voltage being greater than the first programming voltage; and after the second programming voltage is applied to the selected wordline, performing a third one-step operation on the memory cells, the third one-step operation consisting essentially of performing a third verification operation on the memory cells using a fifth threshold voltage greater than the fourth threshold voltage.
地址 Suwon-si KR