发明名称 |
NONVOLATILE MEMORY DEVICE, SYSTEM AND PROGRAMMING METHOD WITH DYNAMIC VERIFICATION MODE SELECTION |
摘要 |
Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition. |
申请公布号 |
US2015124526(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201514595788 |
申请日期 |
2015.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Moo Sung |
分类号 |
G11C16/10;G11C16/34 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a nonvolatile memory device including a plurality of multi-level memory cells, the method comprising:
applying a first programming voltage to a selected wordline; after the first programming voltage is applied to the selected wordline, performing a first two-step operation on memory cells connected to the selected wordline, the first two-step operation including performing a first pre-verification operation on the memory cells using a first threshold voltage and performing a first verification operation on the memory cells using a second threshold voltage greater than the first threshold voltage; after the first programming voltage is applied to the selected wordline, performing a second two-step operation on the memory cells, the second two-step operation including performing a second pre-verification operation on the memory cells using a third threshold voltage greater than the second threshold voltage and performing a second verification operation on the memory cells using a fourth threshold voltage greater than the third threshold voltage; applying a second programming voltage to the selected wordline, the second programming voltage being greater than the first programming voltage; and after the second programming voltage is applied to the selected wordline, performing a third one-step operation on the memory cells, the third one-step operation consisting essentially of performing a third verification operation on the memory cells using a fifth threshold voltage greater than the fourth threshold voltage. |
地址 |
Suwon-si KR |