发明名称 SEMICONDUCTOR DEVICES
摘要 Semiconductor devices are provided. The semiconductor device includes a first pre-charge element and a second pre-charge element. The first pre-charge element receives a first pre-charge signal to pre-charge a first bit line to have a first pre-charge voltage signal. The second pre-charge element receives a second pre-charge signal to pre-charge a second bit line to have a second pre-charge voltage signal. The second pre-charge signal is enabled earlier than the first pre-charge signal in the event that a data stored in a memory cell of a first cell block is loaded on the first bit line.
申请公布号 US2015124543(A1) 申请公布日期 2015.05.07
申请号 US201414193085 申请日期 2014.02.28
申请人 SK hynix Inc. 发明人 LEE Woo Young
分类号 G11C7/12;G11C7/06 主分类号 G11C7/12
代理机构 代理人
主权项 1. A semiconductor device comprising: a first pre-charge element suitable for receiving a first pre-charge signal to pre-charge a first bit line to have a first pre-charge voltage signal; and a second pre-charge element suitable for receiving a second pre-charge signal to pre-charge a second bit line to have a second pre-charge voltage signal, wherein the second pre-charge signal is enabled earlier than the first pre-charge signal in the event that a data stored in a memory cell of a first cell block is loaded on the first bit line.
地址 Icheon-si Gyeonggi-do KR