| 发明名称 |
SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH NON-CRYSTALLINE WIDE BAND GAP EMITTER |
| 摘要 |
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm. |
| 申请公布号 |
US2015122329(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201414267484 |
申请日期 |
2014.05.01 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Bayram Can;Hekmatshoar-Tabari Bahman |
| 分类号 |
H01L31/0328;H01L31/0735;H01L31/074;H01L31/18;H01L31/20 |
主分类号 |
H01L31/0328 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photovoltaic device comprising:
a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity; and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm. |
| 地址 |
Armonk NY US |
