MECHANISMS FOR FORMING METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE

摘要

Embodiments of mechanisms for forming a semiconductor device with metal-insulator-metal (MIM) capacitor structure are provided. The MIM capacitor structure includes a substrate; and a MIM capacitor formed on the substrate. The MIM capacitor includes a bottom electrode formed over the substrate. The bottom electrode is a top metal layer. The MIM capacitor also includes an insulating layer formed on the bottom electrode; and a top electrode formed on the insulating layer.

主权项

1. A metal-insulator-metal (MIM) capacitor structure, comprising:
a substrate; and a MIM capacitor formed on the substrate, wherein the MIM capacitor comprises:
a bottom electrode formed over the substrate, wherein the bottom electrode is a first portion of a top metal layer;an insulating layer formed on the bottom electrode;a top electrode formed on the insulating layer; anda barrier layer formed over the top electrode.