IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

主权项

1. An image sensor comprising:
a substrate; photoelectric transducers and switching elements formed in layers on the substrate in this order, each of the photoelectric transducers including a hydrogenated amorphous silicon layer, each of the switching elements including an amorphous oxide semiconductor layer; and a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, the blocking layer suppressing penetration of hydrogen separated from the hydrogenated amorphous silicon layers.