| 摘要 |
The present invention provides a highly stable piezoelectric element operating at high efficiency, and a method for manufacturing such a piezoelectric element. According to one aspect of the present invention, a piezoelectric element (10) has a laminated structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), a bonding layer (20), an intermediate layer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in the stated order on a silicon substrate (12). The intermediate layer (22) is made of a material different from that of the second electrode (18), the thickness of the intermediate layer (22) being 0.4µm or greater and 10 µm or less. A portion of the silicon substrate (12) is removed, and a device having a diaphragm structure or a cantilever structure is formed. The respective layers (14-28) laminated on the silicon substrate (12) can be formed by a thin-film-forming method such as vapor phase epitaxy. |
