| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method of carboxyl nitride silicon film capable of depositing a silicon carboxyl nitride film without using an oxygen-containing active species, and capable of containing carbon and/or nitride with high concentration.SOLUTION: A gas containing a silicon precursor having a group containing oxygen is supplied onto the processed surface of a workpiece (step 1), a gas containing a carbon precursor is supplied onto the processed surface (step 3), nitrogen gas is supplied onto the processed surface subjected to step 1 and step 3 (step 5), and a silicon carboxyl nitride film is formed on the processed surface by the step 1, step 3 and step 5, without undergoing an oxidation step. |
