| 摘要 |
<p>According to one embodiment, a manufacturing method of a semiconductor device includes a step of forming a dummy-fin semiconductor on a semiconductor substrate; a step of forming an insulating layer, into which a lower part of the dummy-fin semiconductor is buried, on the semiconductor substrate; a step of forming a fin semiconductor, which is bonded to a side face at an upper part of the dummy-fin semiconductor, on the insulating layer; and a step of removing the dummy-fin semiconductor on the insulating layer with the fin semiconductor being left on the insulating layer.</p> |
