发明名称 MULTI-CELL RESONATOR MICROWAVE SURFACE-WAVE PLASMA APPARATUS
摘要 A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.
申请公布号 US2015126046(A1) 申请公布日期 2015.05.07
申请号 US201414534870 申请日期 2014.11.06
申请人 Tokyo Electron Limited 发明人 Funk Merritt;Doppel Megan;Entralgo John;Zhao Jianping;Nozawa Toshihisa
分类号 H01J37/32;H01L21/02;H01L21/3065;H01L21/67 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing system for processing semiconductor substrates, comprising: a plasma chamber comprising a substrate holder; a plurality of power transmission elements arranged around the plasma chamber, the power transmission elements comprising: an interior cavity to propagate microwave frequency electromagnetic waves; anda gap along the interior cavity that forms an opening between the interior cavity and plasma chamber; an antenna coupled to the power transmission elements; and a dielectric component that limits fluid communication between the interior cavity and the plasma chamber.
地址 Tokyo JP