PLASMA PROCESSING APPARATUS AND METHOD THEREFOR

摘要

A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. An area of an upper surface of the electrostatic chuck onto which the wafer is placed via the holding sheet is a flat portion and is not subject to backside gas cooling. A first groove structure is formed in the area onto which the wafer is placed via the holding sheet as well as in an area onto which a holding sheet between the wafer and the frame. To a minute space defined by the first groove structure and the carrier, a heat transfer gas is supplied from a first heat transfer gas supply section through heat transfer gas supply hole (backside gas cooling). Both of plasma processing performance and cooling performance are improved.

主权项

1. A plasma processing apparatus for plasma processing a substrate held by a carrier having a frame and a holding sheet, comprising:
a chamber having a pressure reducible internal space; a process gas supply section configured to supply a process gas into the internal space; a pressure reducing section configured to reduce pressure of the internal space; a plasma generating section configured to generate plasma in the internal space; a stage provided in the chamber and including an electrode unit on which the carrier is placed; a substantially flat portion provided in a first area of the electrode unit, the first area being an area in which the substrate is placed via the holding sheet; a first non-flat portion provided in a second area of the electrode unit, the second area including at least an area in which the frame is placed via the holding sheet and an area in which the holding sheet between the substrate and the frame is placed, the first non-flat portion having at least one concave portion recessed in a direction to be away from the carrier; and a first heat transfer gas supply section configured to supply a heat transfer gas to a first minute space defined between the first non-flat portion and the carrier.