| 发明名称 |
U-SHAPED SEMICONDUCTOR STRUCTURE |
| 摘要 |
A method for forming a U-shaped semiconductor device includes growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, which are formed in a crystalline layer. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. Backfilling is formed underneath the U-shaped semiconductor material with a dielectric material for support. A semiconductor device is formed with the U-shaped semiconductor material. |
| 申请公布号 |
US2015126009(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201514590327 |
申请日期 |
2015.01.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;HASHEMI POUYA;KHAKIFIROOZ ALI |
| 分类号 |
H01L29/66;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a U-shaped semiconductor device, comprising:
growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, the trenches being formed in a crystalline layer; anchoring the U-shaped semiconductor material and removing the crystalline layer; backfilling underneath the U-shaped semiconductor material with a dielectric material for support; and forming a semiconductor device with the U-shaped semiconductor material. |
| 地址 |
Armonk NY US |
