SEMICONDUCTOR STORAGE APPARATUS

摘要

A semiconductor memory device, including a plurality of word lines, a plurality of pairs of bit lines, a plurality of memory cells coupled to the plurality of word lines and the plurality of pairs of bit lines, a plurality of sense amplifiers each coupled between a corresponding pair of bit lines, a plurality of first driver transistors coupled between the plurality of sense amplifiers and a first power supply line, a plurality of second driver transistors coupled between the plurality of sense amplifiers and a second power supply line, a pair of common data lines, and a plurality of column selection gates each coupled between the corresponding pair of bit lines and the pair of common data lines, wherein the number of the first driver transistors is more than the number of the second driver transistor.

主权项

1. A semiconductor memory device, comprising:
a plurality of word lines; a plurality of pairs of bit lines; a plurality of memory cells coupled to the plurality of word lines and the plurality of pairs of bit lines; a plurality of sense amplifiers each coupled between a corresponding pair of bit lines; a plurality of first driver transistors coupled between the plurality of sense amplifiers and a first power supply line; a plurality of second driver transistors coupled between the plurality of sense amplifiers and a second power supply line; a pair of common data lines, and a plurality of column selection gates each coupled between the corresponding pair of bit lines and the pair of common data lines, wherein a number of the first driver transistors is more than a number of the second driver transistor.