| 发明名称 |
METHOD FOR PRODUCING M-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE |
| 摘要 |
Provided is a novel method for producing an m-plane nitride-based LED, the method making it possible to obtain an m-plane nitride-based LED reduced in forward voltage. The method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which an angle between the thickness direction and the m-axis of a hexagonal crystal is 10 degrees or less, (ii) a step of forming an AlGaN layer doped with a p-type impurity over the active layer, (iii) a step of forming a contact layer consisting of InGaN is formed on the surface of the AlGaN layer, and (iv) a step of forming an electrode on the surface of the contact layer. |
| 申请公布号 |
US2015125980(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201414582591 |
申请日期 |
2014.12.24 |
| 申请人 |
MITSUBISHI CHEMICAL CORPORATION ;SEOUL VIOSYS CO., LTC. |
发明人 |
Kurihara Kaori;Takeshita Yutaro;Shimoyama Kenji;Takai Shinji |
| 分类号 |
H01L33/00;H01L33/14;H01L33/42 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for producing an m-plane nitride-based light-emitting diode,
the method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which an angle between the thickness direction and the m-axis of a hexagonal crystal is 10 degrees or less, (ii) a step of forming an AlGaN layer doped with a p-type impurity over the active layer, (iii) a step of forming a contact layer consisting of InGaN is formed on the surface of the AlGaN layer, and (iv) a step of forming an electrode on the surface of the contact layer. |
| 地址 |
Chiyoda-ku JP |
