| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory. <P>SOLUTION: A vertical MISFET having a double-surrounding gate electrode comprises: a first epitaxial Si layer 2 selectively formed on a semiconductor substrate 1; a second epitaxial Si layer 3 formed on the Si layer 2, self-aligned with the Si layer 2 and having a width narrower than the Si layer 2; a third epitaxial Si layer 4 formed on the Si layer 3, self-aligned with the Si layer 3 and having a width wider than the Si layer 3; a first gate insulation film 7 formed at least on a top face of the Si layer 2, an under surface of the Si layer 4 and lateral faces of the Si layer 3; a surrounding floating gate electrode 8 formed on lateral faces of the Si layer 3 via the first gate insulation film 7; a surrounding control gate electrode 10 (word line) formed at least on lateral faces of the floating gate electrode 8 via a second gate oxide film 9; and source/drain regions (5, 6) roughly formed on the Si layer 2 and Si layer 4. A flash memory includes the vertical MISFET. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
