| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-frequency switch with an excellent insertion loss characteristic and an excellent harmonic wave characteristic. <P>SOLUTION: A high-frequency switch includes common ports through which transmission signals are output to an antenna, transmission ports to which the transmission signals are input, and a plurality of switching parts connected between the transmission ports and the common ports and electrically connecting or disconnecting the transmission ports and the common ports. The switching parts include a plurality of MOSFETs formed for a silicon substrate and connected in series. The MOSFETs are body contact type FETs or floating body type FETs. Each switching part includes both the body contact type FET and the floating body type FET. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
