发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A manufacturing method of a semiconductor device forms a through electrode structure passing through a substrate partially. A part of the through electrode structure is exposed by removing the substrate partially. A protection film which includes a photosensitive organic insulating material and covers the exposed through electrode structure is formed on the substrate. The protection film is hardened. The hardened protection film is flattened until the through electrode structure is exposed. A pad structure which is in contact with the exposed through electrode structure is formed. Therefore, the protection film can be formed easily without a high priced facility and can be formed as a single film. Moreover, a process is simplified, and process efficiency is increased by minimizing a pad structure forming a step.
申请公布号 KR20150048388(A) 申请公布日期 2015.05.07
申请号 KR20130128352 申请日期 2013.10.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN, JUN WON;KIM, HYE REUN;HAN, HOON;LEE, DONG JUN;CHOI, JUNG SIK
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
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