| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a non-magnetic garnet single crystal substrate, capable of preventing crack and breakage easily generated in a whole ingot beforehand, when the non-magnetic garnet single crystal ingot is cut and a shoulder part of the ingot is separated from a substrate processing part.SOLUTION: A bismuth substitution type magnetic garnet film is epitaxially grown by cutting and processing the non-magnetic garnet single crystal ingot including a shoulder part 2 and a trunk part 3 made by a rotation pulling method, in the production method of the non-magnetic garnet single crystal substrate. The non-magnetic garnet single crystal ingot is cut at a position 5 which satisfies a requirement of a position where 30 mm or more is grown from a boundary inversion face 4 formed in the non-magnetic single crystal ingot by boundary inversion operation at growth time, and a requirement of a position of a boundary of the shoulder part and the trunk part, or a position grown more than the boundary, and the shoulder part 2 and the substrate processing part is separated. |
