| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of performing a rear surface light emission analysis accurately in a short time.SOLUTION: In a rear surface light emission analyzing method, PIP capacitance elements A, B, C are used as a position recognition pattern for recognizing a position of a defective point. The PIP capacitance elements A, B, C include a lower electrode DE, an upper electrode UE, and a capacitive insulating film which is sandwiched between the lower electrode DE and the upper electrode UE, being different in shape in top view of respective PIP capacitance elements A, B, C. The PIP capacitance elements A, B, C are arranged at a vertex of a triangle in top view, and an interior angle of each corner part of the triangle is an acute angle of less than 90°. The PIP capacitance elements A, B, C are arranged within a range in which a rear surface observation image can be observed in a single field of view at a magnification of 50 times, in rear surface observation of the semiconductor device by using a microscope which uses ultrared ray.</p> |
