| 发明名称 |
MEMORY STRING AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
| 摘要 |
A memory string includes a pass transistor, first memory cells connected in series to a drain terminal of the pass transistor, and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series. Here, ‘k’ denotes an integer that is equal to or greater than ‘2’. |
| 申请公布号 |
US2015124530(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201414220976 |
申请日期 |
2014.03.20 |
| 申请人 |
SK hynix Inc. |
发明人 |
JUNG Sung Wook;LEE Dong Kee;YOO Hyun Seung;PARK Yu Jin |
| 分类号 |
G11C16/04;H01L27/115 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory string comprising:
a pass transistor; first memory cells connected in series to a drain terminal of the pass ransistor; and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series, wherein k denotes an integer that is equal to or greater than ‘2’. |
| 地址 |
Gyeonggi-do KR |
