METAL OXIDE SEMICONDUCTOR SENSOR AND METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION

摘要

A semiconductor sensor device includes a substrate, a non-suitable seed layer located above the substrate, at least one electrode located above the non-suitable seed layer, and a porous sensing layer supported directly by the non- suitable seed layer and in electrical communication with the at least one electrode, the porous sensing layer defining a plurality of grain boundaries formed by spaced-apart nucleation on the non-suitable seed layer using atomic layer deposition.