发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element, capable of suppressing a metal film from unintentionally remaining at a boundary portion in a step.SOLUTION: A method for manufacturing a semiconductor element includes the following steps in the order: a step of forming a first resist film; a step of exposing a region excluding at least a boundary portion of a step in the first resist film to increase the solubility in an exposed region; a step of removing the first resist film formed in the exposed region; a step of forming a second resist film; a step of exposing a region including a region where at least the first resist film is formed in the second resist film to increase the solubility in an exposed region; a step of decreasing the solubility in the exposed region in the second resist film, and then increasing the solubility in a region other than the region having been decreased in solubility; a step of removing the second resist film formed in the region having been increased in solubility; a step of forming a metal film; and a step of removing the metal film formed on the top surface of the second resist film together with the first resist film and the second resist film.
申请公布号 JP2015088678(A) 申请公布日期 2015.05.07
申请号 JP20130227659 申请日期 2013.10.31
申请人 NICHIA CHEM IND LTD 发明人 TANAKA ATSUSHI;NONAKA MITSUHIRO;INUBUSHI TAKEO;SHIMADA MAKOTO;YAMAMOTO TAKESHI
分类号 H01L21/027;G03F7/26;G03F7/38;G03F7/40;H01L21/3205;H01L21/768 主分类号 H01L21/027
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