发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element, capable of suppressing a metal film from unintentionally remaining at a boundary portion in a step.SOLUTION: A method for manufacturing a semiconductor element includes the following steps in the order: a step of forming a first resist film; a step of exposing a region excluding at least a boundary portion of a step in the first resist film to increase the solubility in an exposed region; a step of removing the first resist film formed in the exposed region; a step of forming a second resist film; a step of exposing a region including a region where at least the first resist film is formed in the second resist film to increase the solubility in an exposed region; a step of decreasing the solubility in the exposed region in the second resist film, and then increasing the solubility in a region other than the region having been decreased in solubility; a step of removing the second resist film formed in the region having been increased in solubility; a step of forming a metal film; and a step of removing the metal film formed on the top surface of the second resist film together with the first resist film and the second resist film. |
申请公布号 |
JP2015088678(A) |
申请公布日期 |
2015.05.07 |
申请号 |
JP20130227659 |
申请日期 |
2013.10.31 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
TANAKA ATSUSHI;NONAKA MITSUHIRO;INUBUSHI TAKEO;SHIMADA MAKOTO;YAMAMOTO TAKESHI |
分类号 |
H01L21/027;G03F7/26;G03F7/38;G03F7/40;H01L21/3205;H01L21/768 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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