| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling apparatus which can easily improve a pulling speed for the silicon single crystal or reduce oxygen concentration while adjusting a thermal history.SOLUTION: The silicon single crystal pulling apparatus using a Czochralski method is provided that includes: a crucible housing raw material; a main chamber housing a heater which heats the raw material to produce a raw material melt; and a shield which is provided between the heater and the main chamber, and cuts off radiation heat from the heater. The silicon single crystal pulling apparatus further includes a supporting member supporting the heater and the shield from below, the supporting member being ascendable and descendable to provide ascending and descending of the heater and the shield together. |
