| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensor capable of reducing noises by increasing the area of a channel region in at least one of an amplifier transistor, a readout transistor and a reset transistor in a pixel.SOLUTION: Each pixel includes: a photodiode that generates charge corresponding to the intensity of entering light beam and stores the same therein; an amplifier transistor that forms a channel region in a direction perpendicular to a substrate; and a readout transistor or reset transistor, which are disposed two-dimensionally. The solid state image sensor is applicable to, for example, a rear surface irradiation type CMOS image sensor etc. in which pixels each having an amplifier transistor, a readout transistor and a reset transistor are disposed two-dimensionally. |
