| 摘要 |
<p>PROBLEM TO BE SOLVED: To deposit an oxide semiconductor film low in defect level density, or, as one embodiment of an invention, to deposit an oxide semiconductor film low in impurity concentration, and to enhance electric characteristics in a semiconductor device or the like in which an oxide semiconductor film is used.SOLUTION: A semiconductor device includes a capacitive element, a resistive element or a transistor, which has a metal oxide film that includes a region where diffraction patterns having a bright spot exhibiting orientation are observed at a ratio of 70% or more and less than 100% when an observation point is one-dimensionally changed within a range of 300 nm, using a transmission electron diffraction measurement device.</p> |
