发明名称 |
LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY |
摘要 |
Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ). |
申请公布号 |
US2015126045(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201414520721 |
申请日期 |
2014.10.22 |
申请人 |
Applied Materials, Inc. |
发明人 |
CHATTERJEE Amit;MALLICK Abhijit Basu;INGLE Nitin K. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
forming a silicon nitride layer on a substrate by a remote plasma chemical vapor deposition process at a deposition temperature less than 300 degrees Celsius, wherein the remote plasma chemical vapor deposition process utilizes a processing gas mixture, and wherein the processing gas mixture includes tris(dimethylamino)silane, dichlorosilane, trisilylamine, di-t-butylaminosilane, hexachlorodisilane, or hexamethylcyclotrisilazane. |
地址 |
Santa Clara CA US |