METHOD FOR SEPARATING SEMICONDUCTOR DEVICES USING NANOPOROUS STRUCTURE

摘要

The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off. The method for separating the semiconductor devices using a nanoporous structure includes the steps of: growing a first n-type nitride layer on the substrate; growing a dielectric layer on the first n-type nitride layer; forming a nanoporous structure in the first n-type nitride layer by means of electrochemical etching; re-growing a second n-type nitride layer on the first n-type nitride layer so as to form a second n-type nitride layer containing the dielectric layer; growing a multi-quantum well structure and a p-type nitride layer on the second n-type nitride layer for bonding with a conductive substrate; and separating the semiconductor devices from the substrate through selective HF etching of the dielectric layer.

主权项

1. A method for separating semiconductor devices from a substrate using a nanoporous structure, the method comprising:
forming a first conductivity-type nitride layer on a substrate; forming a dielectric layer on the first conductivity-type nitride layer; forming a nanoporous structure in the first conductivity-type nitride layer using electrolytic etching; forming a second first conductivity-type nitride layer on the first conductivity-type nitride layer and the dielectric layer; forming a multi-quantum well structure and a second conductivity-type nitride layer on the second first conductivity-type nitride layer; bonding the multi-quantum well structure and the second conductivity-type nitride layer to a conductive substrate; and separating the second first conductivity-type nitride layer from the substrate by selectively etching the dielectric layer using HF.