| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which enable in-plane uniform processing on a substrate by utilizing plasma light emission.SOLUTION: A substrate processing apparatus comprises: a process chamber 1; an annular plasma generation room 40; a gas-supply unit 27 for introducing a plasma-generation gas into the annular plasma generation room 40; a microwave-introduction unit 43 for introducing microwaves into the plasma generation room 40, where plasma of the plasma-generation gas is produced by the introduced microwaves, and the plasma thus produced emits vacuum-ultraviolet light having a wavelength of 200 nm or less; and a transmission window 41 which the generated vacuum-ultraviolet light to be directed at a processing space S1 inside the process chamber 1 is passed through. In process chamber, the treatments including the film growth on a substrate S and etching are performed with the aid of light energy of the vacuum-ultraviolet light. |
