| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for reducing defects from an active layer of a semiconductor device.SOLUTION: The active layer is part of a semiconductor in the device, and the active layer is at least laterally defined by an isolation structure and is physically in contact therewith by means of a contact interface. The isolation structure and the active layer abut each other on a common substantially planar surface. The method includes: forming a patterned stress inducing layer 4 on the common substantially planar surface, the stress inducing layer 4 being formed for inducing a stress field in the active layer, the induced stress field resulting in a shear stress on defects present in the active layer; performing an anneal step to thereby move the defects towards the contact interface; and removing the patterned stress inducing layer 4 from the common substantially planar surface 23.</p> |
