| 摘要 |
The invention relates to a method for producing polycrystalline silicon, comprising a deposition of polycrystalline silicon on a carrier body in order to obtain a polycrystalline silicon rod, or a deposition of polycrystalline silicon on silicon particles in order to obtain polycrystalline silicon granules, wherein each deposition takes place in a reactor located in a class 1-100 000 cleanroom into which filtered air is directed. For filtration, said air first passes through at least one filter that removes particles greater than or equal to 1 μm, and subsequently passes through a HEPA filter that removes particles smaller than 1 μm. |
