Provided is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes: determining a first TSV candidate region in a first die; determining a second TSV candidate region in a second die arranged in a vertical direction to the first die; determining a first bound region which includes the horizontal position of a first pin of the first die and the horizontal position of a second pin of the second die; calculating a first area of a region which is overlapped with the first TSV candidate region, the second TSV candidate region, and a first bound region; and determining a route which connects the first and second pin based on the first area.
申请公布号
KR20150047860(A)
申请公布日期
2015.05.06
申请号
KR20130127868
申请日期
2013.10.25
申请人
SAMSUNG ELECTRONICS CO., LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
JANG, MYUNG SOO;KIM, JAE HWAN;JANG, CHEOL JON;SONG, JI HO;CHONG, JONG WHA;CHO, KYUNG IN