| 摘要 |
The present invention relates to an oxide semiconductor thermoelectric element, which has a superior thermoelectric performance, and a preparing method thereof. An oxide semiconductor thermoelectric element having a superior thermal performance of the present invention comprises: a first electrode; a first oxide semiconductor layer formed on the first electrode and composed of metal oxides; a first thin film layer formed on the first oxide semiconductor layer with a n-type/p-type silicon thin film or a thin metal film; a metal oxide layer composed of a Zn oxide or an In oxide and formed on the first thin film layer; a second thin film layer composing an n-type/p-type silicon thin film or a metal thin film and formed on the metal oxide layer; an second oxide semiconductor layer composing metal oxides and formed on the second thin film layer; and a second electrode formed on the second oxide semiconductor layer. According to the present invention, a metal oxide semiconductor of an In oxide or a Zn oxide is basically applied to a thermoelectric material, and a hetero-structured thin film layer having a high electrical conductivity is inserted between multilayered metal oxide layers. A thin film layer, which is heavily doped with impurities to improve an electric conductivity of a thermoelectric material and to lower a thermal conductivity thereof, is inserted to the multi-layers of a metal oxide layer of the In oxide or the Zn oxide. Accordingly, the present invention has the effect of producing an element having a superior thermoelectric performance by using a simple layered structure. |
