Power electronic device with edge passivation

摘要

The present invention relates to a semiconductor device or power electronic device. The device includes a pair of pole pieces (36, 38), each having a profiled surface (40, 42). A semiconductor body or wafer (30), preferably of wide bandgap electronic material, is located between the pole pieces (36, 38) and includes contact metallisation regions (32, 34). The semiconductor body (30) produces an electric field that emerges from an edge region. Passivation means includes a first or radially inner part (44) in contact with the edge region of the semiconductor body (30) and which diffuses the electric field as it emerges from the edge region and a second or radially outer part (46). The second part (46) is in contact with the first part (44) and provides a substantially void-free interface with the profiled surface (40, 42) of each pole piece (36, 38). The device may be immersed in a dielectric liquid (50).