Integrated metal resistor

摘要

A plurality of first wiring layers (M1) are arranged on a main surface of a substrate (SUB), a first insulating film (SO12) is arranged on upper faces of the plurality of first wiring layers (M1), a second insulating film (SO13) is arranged on an upper face of the first insulating film (SO 12), and a plurality of second wiring layers (M2) are arranged on the second insulating film (SO13). A metal resistive element layer (Rmn) is arranged just below at least one second wiring layer (M2) among the plurality of second wiring layers (M2). A plurality of conductive layers (CP1) extend from the plurality of second wiring layers (M2) respectively to the metal resistive element layer (Rmn) in a Z direction perpendicular to the main surface. The metal resistive element layer (Rmn) includes a metal wiring layer (Rm). At least one part of a side face of at least one conductive layer (CP1) among the plurality of conductive layers (CP1) is connected to the metal wiring layer (Rm).