GROWTH METHOD OF GAN ON SI FOR REDUCING CRACKS

摘要

Disclosed is a method of growing GaN on Si substrate for reducing cracks. A method of growing GaN on Si substrate according to an embodiment of the present invention includes: a first step of depositing a metal N composite of an N flux surplus state on a substrate by the growth chamber of a molecular beam epitaxial apparatus and forming a first metal N composite layer; a second step of depositing a N composite of a metal flux surplus state on the first metal N composite layer and forming a second metal N composite layer; a third step of doping the second metal N composite layer with Mg, depositing GaN of an N flux surplus state, and forming a first GaN layer; and a fourth step of depositing GaN of a Ga flux surplus state on the first GaN layer and forming a second GaN layer.