| 摘要 |
<p>Provided is a method of manufacturing a nitride-based light emitting diode. According to the method, a substrate having a nano to micron sized pattern including a bottom section and a convex section, wherein a lower end diameter of the convex section is 0.1 to 3 times a light emitting wavelength of the light emitting diode, and a buffer layer formed on the substrate and formed as a GaN layer are manufactured. According to the method of manufacturing the nitride-based light emitting diode, light extraction is significantly improved, and the nano to micron sized pattern, economically formed.</p> |
